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B3045CTG

ON Semiconductor

Switch-mode Power Rectifiers

MBR3045ST, MBRB3045CT-1 Switch‐mode Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and ...


ON Semiconductor

B3045CTG

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MBR3045ST, MBRB3045CT-1 Switch‐mode Power Rectifier Features and Benefits Dual Diode Construction − Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating 45 V Blocking Voltage Low Forward Voltage Drop 175°C Operating Junction Temperature These are Pb-Free Devices Applications Power Supply − Output Rectification Power Management Instrumentation Mechanical Characteristics Case: Epoxy, Molded Weight (Approximately): 1.9 Grams (TO−220) 1.5 Grams (TO−262) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Epoxy Meets UL 94 V−0 @ 0.125 in MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM 45 V VRWM VR Average Rectified Current (TC = 130°C) Per Device IF(AV) 30 A Per Diode 15 Peak Repetitive Forward Current, per Diode IFRM 30 A (Square Wave, VR = 45 V, 20 kHz) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Current, per Diode IRRM 2.0 A (2.0 ms, 1.0 kHz) Storage Temperature Range Tstg −65 to °C +175 Operating Junction Temperature (Note 1) TJ −65 to °C +175 Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maxim...




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