4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanc...
4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power
MOSFET
1 Description
These N-channel Enhanced VD
MOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
VDSS = 600V RDS(on) (TYP)= 2.1Ω
ID = 4A
2 Features
● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤2.5Ω) ● Low Gate Charge(Typical Data:14.5nC) ● Low Reverse Transfer Capacitances(Typical:4pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test
TO-220C TO-220F TO-262
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
4N60/I4N60/E4N60 /B4N60/D4N60
Maximum Drian-Sourc...