STB4NK60Z-1, STB4NK60ZT4 STD4NK60Z-1, STD4NK60ZT4
Datasheet
N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in...
STB4NK60Z-1, STB4NK60ZT4 STD4NK60Z-1, STD4NK60ZT4
Datasheet
N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power
MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages
TAB
I2PAK 1 2 3
TAB
IPAK
3 2 1
TAB
3
D2PAK1
TAB 23 1
DPAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Product status STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 STD4NK60ZT4
Features
Order codes VDS RDS(on) max.
STB4NK60Z-1
STB4NK60ZT4 STD4NK60Z-1
600 V
2Ω
STD4NK60ZT4
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Zener-protected
PTOT 70 W
ID 4A
Applications
Switching applications
Description
These high-
voltage devices are Zener-protected N-channel Power
MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
DS2818 - Rev 9 - April 2018 For furt...
