JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B5817WS-5819WS SCHOTTKY BARRIER ...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B5817WS-5819WS SCHOTTKY BARRIER DIODE
FEATURES For use in low
voltage, high frequency inverters
Free wheeling, and polarity protection applications
MARKING: B5817WS:SJ
B5818WS:SK
B5819WS:SL
SOD-323
The marking bar indicates the cathode Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Non-repetitive peak reverse
voltage
Peak repetitive peak reverse
voltage Working peak reverse
voltage DC blocking
voltage
RMS reverse
voltage
Average rectified output current
Non-repetitive Peak Forward Surge Current @t=8.3ms
Repetitive peak forward current
Power dissipation Thermal resistance junction to ambient Junction temperature
Storage temperature
Symbol VRM VRRM VRWM VR VR(RMS)
IO
IFSM IFRM
Pd
RθJA
TJ TSTG
B5817WS
20
20
14
B5818WS B5819WS
30 40
30 40
21 1
9 1.5 250 400 125 -55~+150
28
Unit V
V
V A A A mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unles s other wise specified)
Pa rameter Reverse breakdown
voltage Reverse
voltage leakage current
Forward
voltage
Diode capacitance
Symbol V(BR) IR
VF
CD
Test c onditions
IR= 1mA
VR=20V VR=30V VR=40V B5817WS B5818WS B5819WS
B5817WS B5818WS B5819WS B5817WS B5818WS B5819WS
IF=1A
IF=3A
IF=1A
IF=3A
IF=1A
IF=3A
VR=4V, f=1MHz
Min
20 30 40
Max
1 0.45 0.75 0.55 0.875 0.6 0.9 120
Unit V
mA V V V pF
www.cj-elec.com
1
D,Mar,2015
Typical Characte...
