B5N60

5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 1.4Ω ID = 5A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 5N60/I5N60/E5N60 /B5N60/D5N60 Drian-Source Voltage VDS 600 Gate-Drain Voltage V...