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DATA SHEET
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTIO...
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DATA SHEET
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER
AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
High-DC current gain due to Darlington connection Low collector saturation
voltage Low collector cutoff current Ideal for use in direct drive from IC output for magnet drivers such as treminal equipment or cash registers
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector current Base current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg Ratings −100 −100 −7.0 – +5.0 – +8.0 −0.5 1.5 30 150 −55 to +150 Unit V V V A A A W W °C °C
(/(&752'( &211(&7,21
* PW ≤ 10 ms, duty cycle ≤ 50%
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Document No. D16131EJ3V0DS00 Date Published April 2002 N CP(K) Printed in Japan
©
2002 1998
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2SB601
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Collector to emitter
voltage Collector to emitter vol...