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B6010K Datasheet

Part Number B6010K
Manufacturers BiTEK
Logo BiTEK
Description N-channel MOSFET
Datasheet B6010K DatasheetB6010K Datasheet (PDF)

N-Channel 60-V (D-S) MOSFET B6010K General Description The B6010K is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss a.

  B6010K   B6010K






Part Number B6010S
Manufacturers BiTEK
Logo BiTEK
Description Single N-channel MOSFET
Datasheet B6010K DatasheetB6010S Datasheet (PDF)

B6010S Single N-Channel 60-V (D-S) MOSFET General Description The B6010S is the Single N-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to 60V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power management and other battery powered circuits. Pin Configuration SD SD SD GD Features RDS(ON)=90mΩ@VGS=10V (N-Ch) RDS(ON)=120mΩ@VGS=4.5V (N-Ch) Super high density cel.

  B6010K   B6010K







Part Number B6010D
Manufacturers BiTEK
Logo BiTEK
Description N-channel MOSFET
Datasheet B6010K DatasheetB6010D Datasheet (PDF)

N-Channel 60-V (D-S) MOSFET B6010D General Description The B6010D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss a.

  B6010K   B6010K







N-channel MOSFET

N-Channel 60-V (D-S) MOSFET B6010K General Description The B6010K is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. Pin Configuration Features RDS(ON)=90mΩ@VGS=10V RDS(ON)=120mΩ@VGS=4.5V Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-Resistance and Maximum DC Current SOP-8 Package Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC ℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted): Parameter Drain-Source Voltage Gate-Source Voltage ℃Continuous Drain Current(tJ=150 ) ℃TA=25 ℃TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) ℃TA=25 Maximum Power Dissipation ℃TA=70 Operating Junction Temperature Thermal Resistance-Junction to Case Symbol VDSS VGSS ID IDM IS PD TJ RθJC N-Channel 60 ±20 3 2.3 30 1.7 2.0 1.44 -55 to 150 48 Unit V V A A A W ℃ ℃/W Confidential material for authorized user only and BiTEK reserves the utmost right upon the information contained herein. 9 www.BiTEK.com.tw .


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