B6010S
Single N-Channel 60-V (D-S) MOSFET
General Description
The B6010S is the Single N-Channel logic enhancement mode...
B6010S
Single N-Channel 60-V (D-S)
MOSFET
General Description
The B6010S is the Single N-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to 60V operation
voltage is well suited in switching mode power supply, SMPS, notebook computer power management and other battery powered circuits.
Pin Configuration
SD SD SD GD
Features
RDS(ON)=90mΩ@VGS=10V (N-Ch) RDS(ON)=120mΩ@VGS=4.5V (N-Ch) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current SOP-8 Package
Applications
Switching power supply, SMPS Battery Powered System DC/DC Converter DC/AC Converter Load Switch
℃Absolute Maximum Ratings (TA=25 Unless Otherwise Noted):
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
℃Continuous Drain
Current(tJ=150 )
℃TA=25 ℃TA=70
Pulsed Drain Current Maximum Power Dissipation*
℃TA=25 ℃TA=70
Operating Junction & Storage Temperature Range
≦Thermal Resistance-Junction to Ambient* (T 10 sec)
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol VDSS VGSS
ID
IDM
PD
TJ RθJA
Maximum 60 ±20 4 3.5 30 2.0 1.3
-55 to 150 50 62.5
Unit V V
A
A
W
℃ ℃/W
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