STB60NH02L
N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET™ III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB60NH02L
24 V < ...
STB60NH02L
N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET™ III POWER
MOSFET
TYPE
VDSS
RDS(on)
ID
STB60NH02L
24 V < 0.0105 Ω 60 A
■ TYPICAL RDS(on) = 0.0085 Ω @ 10 V
■ TYPICAL RDS(on) = 0.012 Ω @ 5 V
)■ RDS(ON) * Qg INDUSTRY’s BENCHMARK t(s■ CONDUCTION LOSSES REDUCED c■ SWITCHING LOSSES REDUCED u■ LOW THRESHOLD DEVICE rod■ SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
PIN TAPE & REEL (SUFFIX “T4”) leteDESCRIPTION oThe STB60NH02L utilizes the latest advanced design srules of ST’s proprietary STripFET™ technology. This is bsuitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
) - OAPPLICATIONS t(s■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3 1
D2PAK TO-263 (Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
te ProducOrdering Information leSALES TYPE
oSTB60NH02LT4
MARKING B60NH02L
ObsABSOLUTE MAXIMUM RATINGS
PACKAGE TO-263
PACKAGING TAPE & REEL
Symbol
Parameter
Value
Unit
Vspike(1) Drain-source
Voltage Rating
30 V
VDS Drain-source
Voltage (VGS = 0)
24 V
VDGR
Drain-gate
Voltage (RGS = 20 kΩ)
24 V
VGS Gate- source
Voltage
± 20
V
ID Drain Current (continuous) at TC = 25°C
60
A
ID Drain Current (continuous) at TC = 100°C
43
A
IDM(2)
Drain Current (pulsed)
240 A
Ptot Total Dissipation at TC = 25°C
70 W
Derating Factor
0.47 W/°C
EAS (3) Single Pulse Avalanche Energy
280 mJ
Tstg Storage Temperature Tj Max. Operating Junction Temperature
-55 to 175
°C
May...