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B791 Datasheet

Part Number B791
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SB791
Datasheet B791 DatasheetB791 Datasheet (PDF)

2SB791(K) Silicon PNP Epitaxial Application Medium speed and power switching complementary pair with 2SD970(K) Outline TO-220AB 2 http://www.DataSheet4U.com/ 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°.

  B791   B791






Part Number B799
Manufacturers Renesas
Logo Renesas
Description 2SB799
Datasheet B791 DatasheetB799 Datasheet (PDF)

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  B791   B791







Part Number B794
Manufacturers SavantIC
Logo SavantIC
Description 2SB794
Datasheet B791 DatasheetB794 Datasheet (PDF)

SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD985 2SD986 APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Product Specification 2SB794 2SB795 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VCBO .

  B791   B791







Part Number B7901
Manufacturers EPCOS
Logo EPCOS
Description SAW Components
Datasheet B791 DatasheetB7901 Datasheet (PDF)

www.DataSheet4U.com SAW Components SAW Rx Filter K-PCS Series/type: Ordering code: Date: Version: B7901 B39182B7901K410 May 10, 2006 2.0 © EPCOS AG 2005. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited. SAW Components SAW Rx Filter Data Sheet Application s Low loss RF filter for mobile telephone K-PCS syss s s s s B7901 1855.0 MHz tems, receive path (Rx) Low insertion.

  B791   B791







2SB791

2SB791(K) Silicon PNP Epitaxial Application Medium speed and power switching complementary pair with 2SD970(K) Outline TO-220AB 2 http://www.DataSheet4U.com/ 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Rating –120 –120 –7 –8 –12 40 150 –55 to +150 Unit V V V A A W °C °C 2SB791(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min –120 –7 — — 1000 — — — — — — — Typ — — — — — — — — — 0.5 1.6 1.5 Max — — –100 –10 20000 –1.5 –3.0 –2.0 –3.5 — — — V V V V µs µs µs Unit V V µA µA Test conditions I C = –25 mA, RBE = ∞ I E = –50 mA, IC = 0 VCB = –120 V, IE = 0 VCE = –100 V, RBE = ∞ VCE = –3 V, IC = –4 A*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB = –8 mA*1 I C = –8 A, IB = –80 mA*1 I C = –4 A, IB1 = IB2 = –8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test hFE VCE(sat)(1) VCE(sat)(2) VBE(sat)(1) VBE(sat)(2) t on t stg tf Maximum Collector Dissipation Curve 60 Collector power .


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