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B816 Datasheet

Part Number B816
Manufacturers Sanyo
Logo Sanyo
Description 2SB816
Datasheet B816 DatasheetB816 Datasheet (PDF)

Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of built-in ballast resistance. · Goode dependence of fT on current and good HF characteristic. Package Dimensions unit:mm 2022A [2SB816/2SD1046] ( ) : 2SB816 Specifications Absolute Maximum Rating.

  B816   B816






Part Number B817C
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Bipolar Transistor
Datasheet B816 DatasheetB817C Datasheet (PDF)

Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Stora.

  B816   B816







Part Number B817C
Manufacturers Sanyo Electric
Logo Sanyo Electric
Description PNP Epitaxial Planar Silicon Transistor
Datasheet B816 DatasheetB817C Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENA0188 2SB817C / 2SD1047C www.DataSheet4U.com 2SB817C / 2SD1047C Features • • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications ( ) : 2SB817C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Vo.

  B816   B816







Part Number B817
Manufacturers Sanyo
Logo Sanyo
Description PNP Epitaxial Planar Silicon Transistors
Datasheet B816 DatasheetB817 Datasheet (PDF)

Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of on-chip ballast resistance. · Good depenedence of fT on current and excellent high frequency responce. Package Dimensions unit:mm 2022A [2SB817/2SD1047] The descriptions in parentheses ar.

  B816   B816







Part Number B815
Manufacturers Sanyo
Logo Sanyo
Description 2SB815
Datasheet B816 DatasheetB815 Datasheet (PDF)

Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features • Ultrasmall package allows miniaturization in end products. • Large current capacity (IC=0.7A) and low-saturation voltage. Package Dimensions unit : mm 2018B [2SB815 / 2SD1048] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 Specifications ( ) : 2SB815 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Vol.

  B816   B816







2SB816

Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features · Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). · Wide ASO because of built-in ballast resistance. · Goode dependence of fT on current and good HF characteristic. Package Dimensions unit:mm 2022A [2SB816/2SD1046] ( ) : 2SB816 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)5A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz * : The 2SB816/2SD1046 are classified by 1A hFE as follows : 60 D 120 100 E 200 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings (–)150 (–)120 (–)6 (–)8 (–)12 80 150 –40 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 60* 20 15 (220) 160 max (–)0.1 (–)0.1 200* Unit mA mA MHz pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applicati.


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