Power Transistors
2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
4.2±0.2
For power amplification and swi...
Power Transistors
2SB950, 2SB950A
Silicon PNP epitaxial planar type Darlington
4.2±0.2
For power amplification and switching Complementary to 2SD1276 and 2SD1276A
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
Unit: mm
7.5±0.2
s Features
q q q
High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –8 –4 40 2 150 –55 to +150 Unit V
16.7±0.3
φ3.1±0.1
4.0
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SB950 2SB950A 2SB950 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 –0.1
+0.2
2.54±0.25 5.08±0.5 1 2
emitter
voltage 2SB950A Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
B
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
3
Internal Connection
C
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SB950 2SB950A 2SB950 2SB950A 2SB950 2SB950A
E
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat)1 VCE(sat)2 fT ton tstg tf
*
Conditions VCB = –60V, IE = 0 VCB = –80V, IE = 0 VCE = –30V, IB = 0 VCE = –40V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –3V, IC = – 0.5A VCE = –3V, IC = –3A VCE = –3V, IC = –3A IC = –3A, IB = –12mA IC = –5A, IB = –20mA VCE = –10...
