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B962

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2SB962

Silicon Power Transistors 2SB962,962-Z PNP mm DC-DC 1.5 −0.1 +0.2 fT hFE VCE(sat) VCE(sat) 1.6 ±0.2 6.5 ±0.2 5.0 ±0....


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B962

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Silicon Power Transistors 2SB962,962-Z PNP mm DC-DC 1.5 −0.1 +0.2 fT hFE VCE(sat) VCE(sat) 1.6 ±0.2 6.5 ±0.2 5.0 ±0.2 2.3 ±0.2 0.5 ±0.1 5.5 ±0.2 7.0 MIN. ⎛ 2 A ⎞ 0.5 V ⎝0.2 A ⎠ 4 13.7 MIN. +0.2 1 2 3 TA = 25°C 1.1 ±0.2 VCBO VCEO VEBO IC(DC) 1 40 30 5.0 3.0 6.0 0.6 1.0 10 150 -55~+150 V V V A A A W TO-251 MP-3 0.5 −0.1 2.3 2.3 0.75 0.5 −0.1 +0.2 IC(pulse) IB(DC) 2 PT(TA = 25°C) PT(TC = 25°C) Tj Tstg 5.0 ±0.2 4.4 ±0.2 5.6 ±0.3 1.5 −0.1 +0.2 ジャンクション 6.5 ±0.2 W °C °C 2.3 ±0.2 0.5 ±0.1 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 4 5.5 ±0.2 1. 2. PW 10 ms, Duty Cycle 50 1 2 3 0.5 ±0.1 0.5 ±0.1 2.3 ±0.3 2.3 ±0.3 0.15 ±0.15 9.5 ±0.5 1. 2. 3. 4. TO-252 MP-3Z 0 0.2 mm D18265JJ4V0DS00 TC-5641B July 2006 NS CP(K) 4 1982, 2006 PDF 2SB962,962-Z 2 D18265JJ4V0DS 2SB962,962-Z D18265JJ4V0DS 3 ...




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