B976

Transistor 2SB976 Silicon PNP epitaxial planer type For low-frequency output amplification For DC-DC converter For stroboscope Unit: mm 5.0±0.2 4.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –27 –18 –7 –8 –5 0.75 150 –55 ~ +150 Unit V V 1 2 3 0.45 –0.1 1.27 +0.2 13.5±0.5 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 5.1±0.2 0.45 –0.1 1.27 +0.2 2.3±0.2 V A A W ˚C ˚C 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO IEBO VCEO VEBO hFE fT Cob *1 Conditions VCB = –10V, IE = 0 VEB = –5V, IC = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –2A*2 IC = –3A, IB = –0.1A*2 VCB = –6V, IE = 50mA, f = 200MHz VCB = –20V, IE = 0, f = 1MHz min typ max –100 –1 Unit nA µA V V –18 –7 125 – 0.4 120 60 *2 625 –1 V MHz pF Pulse measurement VCE(sat) *1h FE Rank classification Q 125 ~ 205 R 180 ~ 625 Rank hFE 1 Free Datasheet http://www.Datasheet4U.com Transistor PC — Ta 1.0 –6 Ta=25˚...