B985

Ordering number:1244C PNP/NPN Epitaxial Planar Silicon Transistors 2SB985/2SD1347 Large-Current Driving Applications Applcations · Power supplies, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. Package Dimensions unit:mm 2006A [2SB985/2SD1347] ( ) : 2SB985 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)3A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz * : The 2SB985/2SD1347 are classified by 100mA hFE as follows : 100 R 200 140 S 280 200 T 400 280 U 560 EIAJ : SC-51 SANYO : MP B : Base C : Collector E : Emitter Ratings (–)60 (–)50 (–)6 (–)3 (–)6 1 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 100* 40 150 25(39) max (–)1.0 (–)1.0 560* Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reli...