INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SB989
DESCRIPTION ·Collector-Emitter Br...
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SB989
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -80V(Min) ·Collector Power Dissipation-
: PC= 30W@ TC= 25℃ ·Low Collector Saturation
Voltage-
: VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A) ·Complement to Type 2SD1352
APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-80 V
VCEO
Collector-Emitter
Voltage
-80 V
VEBO
Emitter-Base
Voltage
-5 V
IC Collector Current-Continuous
-4 A
IB Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
-0.4 A 30 W 150 ℃ -55~150 ℃
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SB989
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On
Voltage
IC= -3A; VCE= -5V
ICBO Collector Cutoff Current
VCB= -80V; IE= 0
IEBO Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
COB Output Capacitance fT Current-Gain—Bandwidth Product
IE= 0; VCB= -10V; ftest= 1MHz IC= -0.5A; VCE= -5V
MIN TYP. MAX UNIT -80 V
-1.7 V -1.5 V -30 μA -100 μA 40 240 15 90 pF 8 MHz
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