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B9NB50 Datasheet

Part Number B9NB50
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-Channel MOSFET
Datasheet B9NB50 DatasheetB9NB50 Datasheet (PDF)

STB9NB50 N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET TYPE ST B9NB50 VDSS 500 V RDS(on) < 0.85 Ω ID 8.6 A s TYPICAL RDS(on) = 0.75 Ω s EXTREMELY HIGH dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s VERY LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s LOW LEAKAGE CURRENT s APPLICATION ORIENTED CHARACTERIZATION s FOR SMD D2PAK VERSION CONTACT SALES OFFICE APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER.

  B9NB50   B9NB50






N-Channel MOSFET

STB9NB50 N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET TYPE ST B9NB50 VDSS 500 V RDS(on) < 0.85 Ω ID 8.6 A s TYPICAL RDS(on) = 0.75 Ω s EXTREMELY HIGH dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s VERY LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s LOW LEAKAGE CURRENT s APPLICATION ORIENTED CHARACTERIZATION s FOR SMD D2PAK VERSION CONTACT SALES OFFICE APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS) 123 I2PAK TO-262 (suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VD GR VGS ID ID Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC IDM(•) Ptot Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt(1) Pe.


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