B9NC60

N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh™II MOSFET TYPE STB9NC60 STB9NC60-1 www.DataSheet4U.com s s s s s STB9NC60 STB9NC60-1 VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 3 12 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s D2PAK I2PAK INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt Tstg Tj February 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 9 5.7 36 125 1.0 3.5 – 55 to 150 (1)ISD ≤ 9A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX Unit V V V A A A W W/°C V/ns °C ()Pulse width limited by safe operating area 1/10 STB9NC60 / STPBNC60-1 THERMAL DATA Rthj-case ...