DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BA220 High-speed diode
Product specification Supersedes data of April 1996 F...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BA220 High-speed diode
Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03
Philips Semiconductors
Product specification
High-speed diode
FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns General application Continuous reverse
voltage: max. 10 V Repetitive peak reverse
voltage: max. 10 V Repetitive peak forward current: max. 400 mA.
The diode is type branded.
handbook, halfpage k
BA220
DESCRIPTION The BA220 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
a
MAM246
APPLICATIONS High-speed switching.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse
voltage continuous reverse
voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 9 3 1 350 +200 200 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. − − − − MAX. 10 10 200 400 V V mA mA UNIT
1996 Sep 03
2
Philips Semiconductor...