Silicon RF Switching Diode • For band switching in TV/VTR tuners
and mobile applications
• Very low forward resistance (...
Silicon RF Switching Diode For band switching in TV/VTR tuners
and mobile applications
Very low forward resistance (typ. 0.45 Ω @ 3 mA) Small capacitance Pb-free (RoHS compliant) package Qualified according AEC Q101
BA592/BA892...
BA592 BA892/-02L BA892-02V
Type BA592 BA892 BA892-02L BA892-02V
Package SOD323 SCD80 TSLP-2-1 SC79
Configuration single single single, leadless single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse
voltage Forward current Junction temperature Operating temperature range Storage temperature
VR IF TJ Top TStg
LS(nH) 1.8
0.6
0.4
0.6
Marking blue S AA AA A
Value 35 100 150
-55 ... 125 -55 ... 150
Unit V mA °C
1 2011-07-21
BA592/BA892...
Thermal Resistance Parameter Junction - soldering point1) BA592 BA892, BA892-02V BA892-02L
Symbol RthJS
Value
≤ 135 ≤ 120 ≤ 70
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics Reverse current VR = 20 V Forward
voltage IF = 100 mA
IR - - 20 VF - - 1
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
nA V
2 2011-07-21
BA592/BA892...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
AC Characteristics
min. typ. max.
Diode capacitance
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 0 V, f = 100 MHz
CT 0.65 0.92 1.4 0.6 0.85 1.1 - 1-
Reverse parallel resistance VR = 0 V, f = 100 ...