BA983

BA982.BA983 Vishay Telefunken Silicon Planar Diodes Features D D D D Low differential forward resistance Low diode capacitance High reverse impedance Quadro Melf package Applications Band switching in VHF–tuners 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 35 100 150 –55...+150 Unit V mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Test Conditions IF=100mA VR=20V f=100MHz, VR=1V f=100MHz, VR=3V f=200MHz, IF=3mA f=200MHz, IF=10mA Type Symbol VF IR CD CD CD rf rf rf rf Min Typ Max 1 50 1.5 1.25 1.2 0.7 1.2 0.5 0.9 Unit V nA pF pF pF Differential forward resistance BA982 BA983 BA982 BA983 BA982 BA983 W W W W Document Number 85534 Rev. 2, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (3) BA982.BA983 Vishay Telefunken rf – Differential Forward Resistance (W ) 100 CD – Diode Capacitance ( pF ) f = 200 MHz Tj = 25°C 10 3.0 2.5 2.0 1.5 BA 982 1.0 BA 983 0.5 0 0.1 94 9076 f = 100 MHz Tj = 25°C BA 983 1 BA 982 0.1 1 10 100 94 9077 0.1 1 10 100 IF – Forward Current ( mA ) VR – Reverse Voltage ( V ) Figure 1. Differential Forward Resistance vs. Forward Current Figure 2. Diode Capacitance vs. Reverse Voltage Dimensions in mm 96 12...