DatasheetsPDF.com
BAL99LT1
DIODE
Description
SWITCHING DIODE RoHS BAL99LT1 Features Power dissipation PD : 350 mW (Tamb=25 C) Pluse Drain DIF : 100 mA TReverse
Voltage
VR : 70V .,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C 1 1. 2.4 1.3 SOT-23 3 2 1.BASE 2.EMITTER 3.COLLECTOR COANODE-CATHODE 3 IC1 2 ANODE CATHODE Marking:JF 2.9 1.9 0.95 0.95 0.4 Unit:mm ONElectr...
WEJ
Download BAL99LT1 Datasheet
Similar Datasheet
BAL99LT1
Switching Diode
- ON Semiconductor
BAL99LT1
CASE 318-08/ STYLE 18 SOT-23 (TO-236AB)
- Motorola Inc
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)