BAP1321-01

DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com M3D319 BAP1321-01 Silicon PIN diode Preliminary specification 2001 Nov 01 Philips Semiconductors Preliminary specification Silicon PIN diode FEATURES High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Very low series inductance www.DataSheet4U.com BAP1321-01 PINNING PIN DESCRIPTION cathode anode For applications up to 3 GHz. handbook, halfpage APPLICATIONS RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD723A ultra small plastic SMD package. Marking code: K7 Fig.1 Simplified outline (SOD723A) and symbol. ; 2 1 2 Top view 1 MAM405 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C CONDITIONS MIN. − − − −65 −65 MAX. 60 100 315 +150 +150 UNIT V mA mW °C °C 2001 Nov 01 2 Philips Semiconductors Preliminary specification Silicon PIN diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR www.DataSheet4U.com C d BAP1321-01 PARAMETER forward voltage reverse leakage current diode capacitance CONDITIONS IF = 50 mA VR = 60 V VR = 20 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz TYP. 0.95 − − 0.32 0.28 0.22 3.2 2.3 1.1 0.8 15.7 10.8 8.7 0.26 0.28 0.31 0.20 0.23 0.25 ...