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BAP50-04

NXP

General purpose PIN diode

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP50-04 General purpose PIN diode Preliminary specification 19...


NXP

BAP50-04

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DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP50-04 General purpose PIN diode Preliminary specification 1999 May 10 Philips Semiconductors Preliminary specification General purpose PIN diode FEATURES Two elements in series configuration in a small-sized plastic SMD package Low diode capacitance Low diode forward resistance. APPLICATIONS General RF applications. DESCRIPTION Two planar PIN diodes in series configuration in a SOT23 small plastic SMD package. 3 Marking code: 4Lp. handbook, halfpage 2 BAP50-04 PINNING PIN 1 2 3 DESCRIPTION anode cathode common connection 1 2 3 1 MAM232 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C − − − −65 −65 50 50 250 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN. MAX. UNIT 1999 May 10 2 Philips Semiconductors Preliminary specification General purpose PIN diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF VR IR Cd forward voltage reverse voltage reverse current diode capacitance IF = 50 mA IR = 10 µA VR = 50 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 Note 1. Guaranteed on AQL basis: inspe...




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