DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
BAP50-04 General purpose PIN diode
Preliminary specification 19...
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
BAP50-04 General purpose PIN diode
Preliminary specification 1999 May 10
Philips Semiconductors
Preliminary specification
General purpose PIN diode
FEATURES Two elements in series configuration in a small-sized plastic SMD package Low diode capacitance Low diode forward resistance. APPLICATIONS General RF applications. DESCRIPTION Two planar PIN diodes in series configuration in a SOT23 small plastic SMD package.
3
Marking code: 4Lp.
handbook, halfpage 2
BAP50-04
PINNING PIN 1 2 3 DESCRIPTION anode cathode common connection
1
2 3
1
MAM232
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse
voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C − − − −65 −65 50 50 250 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
1999 May 10
2
Philips Semiconductors
Preliminary specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF VR IR Cd forward
voltage reverse
voltage reverse current diode capacitance IF = 50 mA IR = 10 µA VR = 50 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 Note 1. Guaranteed on AQL basis: inspe...