BAR64-03W
Low signal distortion, surface mount RF PIN diode
Product description
This Infineon cost optimized RF PIN diod...
BAR64-03W
Low signal distortion, surface mount RF PIN diode
Product description
This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold off large RF
voltages, and is best suited for frequencies as high as 3 GHz. Its nominal 50 μm I-region width, combined with the typical 1.55 μs carrier lifetime, result in a diode with low forward resistance and low distortion characteristics.
Feature list
Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical) Very low capacitance C = 0.2 pF (typical) at
voltage VR = 0 and frequencies f ≥ 1 GHz Low forward resistance RF = 2.7 Ω (typical) at forward current IF = 10 mA and frequency f = 100 MHz Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm) Pb-free, RoHS compliant and halogen-free
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
Optimized for low bias current RF and high-speed interface switches and attenuators Wireless communication High speed data networks
Device information
Table 1
Part information
Product name / Ordering code BAR64-03W / BAR6403WE6327HTSA1
Package SOD323
Configuration Single, with leads
Marking Pieces / Reel
blue 2
3k
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions!
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
v1.0 2018-06-30
BAR64-03W
Low signal d...