BAR64-W

BAR 64 ... W Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz 3 2 1 VSO05561 BAR 64-04W BAR 64-05W BAR 64-06W Type BAR 64-04W BAR 64-05W BAR 64-06W Marking Ordering Code PPs PRs PSs Q62702-A1264 Q62702-A1265 Q62702-A1266 Pin Configuration 1 = A1 1 = A1 1 = C1 2 = C2 2 = C2 2 = C2 3 = C1/2 3 = A1/2 Package 3=C1/A2 SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 115 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 200 100 250 150 - 55 ...+150 - 55 ...+150 Unit V mA mW °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 300 ≤ 140 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAR 64 ... W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. 50 1.1 Unit V(BR) IR VF 200 - V µA mV I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 50 mA AC characteristics Diode capacitance CT rf - 0.23 0.35 pF Ω VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier life time τrr - 12.5 2.1 0.85 1.55 1.2 20 2.8 1.35 µs nH ...