BAR81W

BAR 81W Silicon RF Switching Diode Preliminary data Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss 3 4 2 1 VPS05605 Type BAR 81W Marking Ordering Code BBs Q62702-A1270 Pin Configuration Package 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 138 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 30 100 100 150 -55 ...+125 -55 ...+150 Unit V mA mW °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 200 ≤ 120 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAR 81W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Characteristics Reverse current Symbol min. Values typ. 0.93 max. 20 1 nA V Unit IR VF - VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.6 0.57 0.7 0.15 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf Ls Ω nH IF = 5 mA, f = 100 MHz Series inductance Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAR 81W Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 120 mA 100 90 80 TS IF ...