Silicon Deep Trench PIN Diodes • Optimized for low bias current antenna
switches in hand held applications
• Very low ca...
Silicon Deep Trench PIN Diodes Optimized for low bias current antenna
switches in hand held applications
Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF)
Low forward resistance (typ. 1.3 Ω @ IF = 3 mA)
Improved ON / OFF mode harmonic distortion balance
Pb-free (RoHS compliant) package
BAR90...
BAR90-02EL BAR90-02ELS
12
BAR90-098LRH
4
D1
3
D2
12
Type BAR90-02ELS BAR90-02EL BAR90-098LRH
Package TSSLP-2-3 TSLP-2-19 TSLP-4-7
* Marking of TSSLP-2-3 with underline
Configuration single, leadless single, leadless anti-parallel pair, leadless
LS(nH) 0.2
0.4
0.4
Marking J* X T9
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse
voltage
Forward current
Total power dissipation TS ≤ 137 °C, BAR90-02ELS TS ≤ 133°C, all others
VR IF Ptot
Junction temperature Operating temperature range Storage temperature
Tj Top Tstg
Value 80 100
150 250 150 -55 ... 125 -55 ... 150
Unit V mA mW
°C
1 2013-06-10
BAR90...
Thermal Resistance Parameter Junction - soldering point1) BAR90-02ELS All others
Symbol RthJS
Value
≤ 90 ≤ 65
Unit K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown
voltage I(BR) = 5 µA Reverse current VR = 60 V Forward
voltage IF = 3 mA IF = 100 mA
V(BR) IR VF
80 -
-
- - 50
0.75 0.81 0.87 - 0.9 1
Unit
V nA V
1For calculation of RthJA please refer to Application Note AN077 (Therm...