BAS 125W Silicon Schottky Diodes
Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and cl...
BAS 125W Silicon Schottky Diodes
Preliminary data For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward
voltage
BAS 125-04W
BAS 125-04W
BAS 125-06W
ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Marking Ordering Code Pin Configuration Type BAS 125-04W BAS 125-05W BAS 125-06W BAS 125W Parameter Diode reverse
voltage Forward current Surge forward current (t ≤ 10ms) Total Power dissipation 14s 15s 16s 13s Q62702Q62702Q62702Q627021 = A1 1 = A1 1 = C1 1=A Symbol 2 = C2 2 = A2 2 = C2
Package
3=C1/A2 SOT-323 3=C1/C2 SOT-323 3=A1/A2 SOT-323 3=C Values 25 100 500 mW 250 150 - 55 ... + 150 ≤ 310 ≤ 425 ≤ 230 ≤ 265 °C SOT-323 Unit V mA
Maximum Ratings
VR IF IFSM Ptot Tj Tstg
1) 1)
TS ≤ 25 °C
Junction temperature Storage temperature Thermal Resistance Junction ambient, BAS125W
RthJA RthJA RthJS RthJS
K/W
Junction ambient, BAS 125-04W...06W Junction - soldering point, BAS125W
Junction - soldering point, BAS125-04W...06W
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
Semiconductor Group
1
Dec-20-1996
BAS 125W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
385 530 800 150 200
nA
VR = 20 V VR = 25 V
Forward
voltage
VF
400 650 900
mV
IF = 1 mA IF = 10 mA IF = 35 mA
AC Characteristics Diode capacitance
CT
16 1.1
pF Ω -
VR = 0 V, f = 1 MHz
Differential f...