BAS125W
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applicatio...
BAS125W
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
Integrated diffused guard ring Low forward
voltage
3
2 1
BAS125W BAS125-04W
3
1 3
EHA07002
VSO05561
BAS125-05W
3
BAS125-06W
3
1
2
EHA07005
1
2
EHA07004
1
2
EHA07006
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package
BAS125W BAS125-04W BAS125-05W BAS125-06W
13s 14s 15s 16s
1=A 1 = A1 1 = A1 1 = C1
2 n.c. 2 = C2 2 = A2 2 = C2
3=C 3 = C1/A2 3 = C1/2 3 = A1/2
SOT323 SOT323 SOT323 SOT323
Maximum Ratings Parameter Diode reverse
voltage Forward current Surge forward current (t 100s) Total power dissipation BAS125W, TS = 93 °C BAS 125-04W...06W Junction temperature Storage temperature , TS = 84 °C Symbol VR IF IFSM Ptot Ptot Tj Top Tstg Value 25 100 500 250 250 150 -55 ... 150 -55 ... 150 mW °C Unit V mA
Operating temperature range
Thermal Resistance Junction - soldering point1) BAS125W BAS125-04W...06W
1For calculation of R thJA please refer to Application Note Thermal Resistance
RthJS
K/W
230 265
1
Nov-15-2001
BAS125W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward
voltage IF = 1 mA IF = 10 mA IF = 35 mA AC characteristics
Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Rf CT
Unit max. nA
typ.
IR VF 385 ...