BAS125-07

BAS 125-07W Silicon Schottky Diode For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-D1347 Pin Configuration Package BAS 125-07W 17s Maximum Ratings Parameter Diode reverse voltage Forward current 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Symbol Value 25 100 500 250 150 - 55 ...+150 Unit V mA mW °C VR IF I FSM Ptot Tj T stg Surge forward current (t< 100µs) Total power dissipation, T S = 25 °C Junction temperature Storage temperature Maximum Ratings Junction - ambient 1) RthJA RthJS ≤ 725 ≤ 565 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Jun-04-1998 1998-11-01 BAS 125-07W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. Unit IR 385 530 800 150 200 µA VR = 20 V VR = 25 V Forward voltage VF 400 650 900 mV I F = 1 mA I F = 10 mA I F = 35 mA AC characteristics Diode capacitance CT rf - 16 1.1 - pF Ω VR = 0 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Jun-04-1998 1998-11-01 BAS 125-07W Forward current IF = f (V F) Forward current IF = f (TA*;TS) * Package mounted on epoxy EHD07...