DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D050
BAS15 High-speed diode
Product specification Supersedes data ...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D050
BAS15 High-speed diode
Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 10
Philips Semiconductors
Product specification
High-speed diode
FEATURES Hermetically sealed leaded glass SOD68 (DO-34) package High switching speed: max. 4 ns Continuous reverse
voltage: max. 50 V Repetitive peak reverse
voltage: max. 50 V Repetitive peak forward current: max. 225 mA. APPLICATIONS High-speed switching Protection diodes in reed relays.
The diode is type branded.
BAS15
DESCRIPTION The BAS15 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package.
k handbook, halfpage
a
MAM156
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse
voltage continuous reverse
voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 350 +200 200 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. − − − − MAX. 50 50 100 225 V V mA mA UNIT
1996 Sep 1...