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BAS15

NXP

High-speed diode

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAS15 High-speed diode Product specification Supersedes data ...


NXP

BAS15

File Download Download BAS15 Datasheet


Description
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAS15 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 10 Philips Semiconductors Product specification High-speed diode FEATURES Hermetically sealed leaded glass SOD68 (DO-34) package High switching speed: max. 4 ns Continuous reverse voltage: max. 50 V Repetitive peak reverse voltage: max. 50 V Repetitive peak forward current: max. 225 mA. APPLICATIONS High-speed switching Protection diodes in reed relays. The diode is type branded. BAS15 DESCRIPTION The BAS15 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. k handbook, halfpage a MAM156 Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 350 +200 200 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. − − − − MAX. 50 50 100 225 V V mA mA UNIT 1996 Sep 1...




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