BAS16GW

BAS16GW High-speed switching diode 23 November 2016 Product data sheet 1. General description High-speed switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: trr ≤ 4 ns Low leakage current Reverse voltage VR ≤ 100 V Low capacitance: Cd ≤ 1.5 pF Small SMD plastic package AEC-Q101 qualified 3. Applications High-speed switching at high voltage General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VR reverse voltage IR reverse current trr reverse recovery time Conditions Tj = 25 °C VR = 80 V; pulsed; Tj = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Switched from IF = 10 mA to IR = 10 mA; Tj = 25 °C Min Typ Max Unit - - 100 V - - 0.5 µA - - 4 ns Nexperia BAS16GW High-speed switching diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Cathode 2 A Anode Simplified outline 12 SOD123 Graphic symbol 1 2 sym001 6. Ordering information Table 3. Ordering information Type number Package Name BAS16GW SOD123 Description Plastic surface-mounted package; 2 leads Version SOD123 7. Marking Table 4. Marking codes Type number BAS16GW Marking code GA BAS16GW Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2016 © Nexperia B.V. 2017. All rights reserved 2 / 12 Nexperia BAS16GW High-speed switching diode 8. Limiting...