BAS216WS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE BAS216WS SOD-323 PLASTIC PCAKAGE Marking BAS216WS=W2 with cathode band ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non Repetitive Peak Forward Surge Current at t=1s at t=1ms at t=1µs Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRRM VR IF IFRM IFSM Ptot Tj Tstg ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Forward Voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Reverse Current IR VR=25V VR=75V VR=25V, Tj=150ºC VR=75V, Tj=150ºC VALUE 85 75 250 500 0.5 1.0 4.0 200 150 - 65 to +150 MIN MAX 0.715 0.855 1.0 1.25 30 1.0 30 50 DYNAMIC CHARACTERISTICS Diode Capacitance Reverse Recovery Time BAS216WS Rev010410E Ctot VR=0V, f=1MHz 1.5 IF=10mA, to IR=10mA trr RL=100 Ω 4.0 Measured at IR=1mA . UNIT V V mA mA A A A mW ºC ºC UNIT V V V V nA µA µA µA pF ns Continental Device India Limited Data Sheet Page 1 of 3 BAS216WS SOD-323 PLASTIC PCAKAGE Com pone nt D isposa l I nst r uct ions 1. CDI L Sem iconduct or Devices are RoHS com pliant , cust om ers are request ed t o please dispose as per prevailing Environm ent al Legislat ion of t heir Count ry. 2. I n Europe, please dispose as per EU Direct ive 2002/ 96/ EC on Wast e Elect rical and Elect ronic Equipm ent...