BAS21AVD
1 August 2013
SO
T4 57
High-voltage switching diodes
Product data sheet
1. General description
Triple high...
BAS21AVD
1 August 2013
SO
T4 57
High-
voltage switching diodes
Product data sheet
1. General description
Triple high-
voltage switching diodes, encapsulated in a SOT457 (SC-74/TSOP6) small Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High switching speed: trr ≤ 50 ns Reverse
voltage: VR ≤ 200 V Repetitive peak reverse
voltage: VRRM ≤ 250 V Small SMD plastic package Low capacitance: Cd ≤ 5 pF AEC-Q101 qualified Repetitive peak forward current: IFRM ≤ 1 A
3. Applications
High-
voltage switching in surface-mounted circuits Automotive Communication
4. Quick reference data
Table 1. Symbol Per diode IF VR Per diode IR trr reverse current reverse recovery time VR = 200 V; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.02 IF = 30 mA; IR = 30 mA; IR(meas) = 3 mA; RL = 100 Ω; Tamb = 25 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Quick reference data Parameter forward current reverse
voltage Conditions pulsed; tp ≤ 300 µs; δ ≤ 0.02
[1]
Min -
Typ -
Max 200 200
Unit mA V
-
25 16
100 50
nA ns
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NXP Semiconductors
BAS21AVD
High-
voltage switching diodes
5. Pinning information
Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description A1 A2 A3 K3 K2 K1 anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) cathode (diode 2) cathode (diode 1)
1 2 3
Simplified outline
6 5 4
Gr...