BAS21GW

BAS21GW High-voltage switching diode 15 June 2017 Product data sheet 1. General description High-voltage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: trr ≤ 50 ns Low leakage current: IR ≤ 100 nA High reverse voltage VR ≤ 200 V Low capacitance: Cd ≤ 2 pF Small SMD plastic package AEC-Q101 qualified 3. Applications High-speed switching General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter IF forward current VR reverse voltage VF forward voltage IR reverse current trr reverse recovery time Conditions Tj = 25 °C IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C VR = 200 V; pulsed; Tj = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tj = 25 °C Min Typ Max Unit - - 225 mA - - 200 V - - 1.25 V - - 100 nA - - 50 ns Nexperia BAS21GW High-voltage switching diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Cathode 2 A Anode Simplified outline 12 SOD123 Graphic symbol 1 2 sym001 6. Ordering information Table 3. Ordering information Type number Package Name BAS21GW SOD123 Description Plastic surface-mounted package; 2 leads Version SOD123 7. Marking Table 4. Marking codes Type number BAS21GW Marking code GC BAS21GW Product data sheet All information provided in this document is subject to legal disclaimers. 15 June 2017 © Nexperia B.V. 2017. All rights rese...