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BAS21LT1 Datasheet

Part Number BAS21LT1
Manufacturers Motorola Inc
Logo Motorola  Inc
Description CASE 318 08/ STYLE 8 SOT 23 (TO 236AB)
Datasheet BAS21LT1 DatasheetBAS21LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS21LT1/D High Voltage Switching Diode 3 CATHODE 1 ANODE BAS21LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc 1 2 3 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Ju.

  BAS21LT1   BAS21LT1






Part Number BAS21LT1
Manufacturers WEJ
Logo WEJ
Description DIODE
Datasheet BAS21LT1 DatasheetBAS21LT1 Datasheet (PDF)

SWITCHING DIODE RoHS BAS21LT1 Features Power dissipation PD : 225 mW (Tamb=25 C) Pluse Drain DIF : 200 mA TReverse Voltage VR : 250V .,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C 1 1. 2.4 1.3 SOT-23 3 2 1.BASE 2.EMITTER 3.COLLECTOR COANODE-CATHODE 3 IC1 2 ANODE CATHODE Marking:JS 2.9 1.9 0.95 0.95 0.4 Unit:mm ONElectro-Optical Characteristics RParameter Symbol TReverse breakdown voltage V(BR) CReverse Voltage leakage current IR EForward Voltage LD.

  BAS21LT1   BAS21LT1







Part Number BAS21LT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description (BAS19LT1 - BAS21xxx1) High Voltage Switching Diode
Datasheet BAS21LT1 DatasheetBAS21LT1 Datasheet (PDF)

www.DataSheet4U.com BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Continuous Reverse Voltage BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 Continuous Forward Current Peak Forward Surge Current Junction and Storage Temperature Range Power Dissipation (Note 1) Electrostatic Discharge Symbol VR Value 120 200 250 120 200 250 200 625 −55 to +150 385 HM < 500 MM < 400 Uni.

  BAS21LT1   BAS21LT1







CASE 318 08/ STYLE 8 SOT 23 (TO 236AB)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS21LT1/D High Voltage Switching Diode 3 CATHODE 1 ANODE BAS21LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc 1 2 3 CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BAS21LT1 = JS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR — — V(BR) VF — — CD trr — — 1000 1250 5.0 50 pF ns 250 1.0 100 — Vdc mV µAdc   0.062 in.   0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Motoro.


2005-03-26 : HYB3116160BSJ    HYB3116160BSJ-50    HYB3116160BSJ-60    HYB3116160BSJ-70    HYB3116160BST-50    HYB3116160BST-60    HYB3116160BST-70    HYB3116400BJ-50    HYB3116400BJ-60    HYB3116400BJ-70   


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