DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D154
BAS221 General purpose diode
Product specification Supersedes...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D154
BAS221 General purpose diode
Product specification Supersedes data of 1999 Apr 26 1999 May 07
Philips Semiconductors
Product specification
General purpose diode
FEATURES Small ceramic SMD package Switching speed: max. 50 ns General application Continuous reverse
voltage: max. 200 V Repetitive peak reverse
voltage: max. 250 V Repetitive peak forward current: max. 1 A.
bottom view side view top view
handbook, 4 columns
BAS221
DESCRIPTION The BAS221 is a general purpose diode fabricated in planar technology, and encapsulated in the ceramic SOD110 package.
cathode mark k k a
a
MAM139
APPLICATIONS General purpose switching in e.g. surface mounted circuits.
Marking code: JS.
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse
voltage continuous reverse
voltage continuous forward current repetitive peak forward current non-repetitive peak forward current note 1; see Fig.2 tp < 0.5 ms; δ ≤ 0.25 square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 20 7 2 400 +150 150 A A A mW °C °C CONDITIONS − − − − MIN. MAX. 250 200 300 1 V V mA A UNIT
1999 May 07
2
Philips Semiconductors
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