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BAS221

NXP

General purpose diode

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS221 General purpose diode Product specification Supersedes...


NXP

BAS221

File Download Download BAS221 Datasheet


Description
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS221 General purpose diode Product specification Supersedes data of 1999 Apr 26 1999 May 07 Philips Semiconductors Product specification General purpose diode FEATURES Small ceramic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage: max. 200 V Repetitive peak reverse voltage: max. 250 V Repetitive peak forward current: max. 1 A. bottom view side view top view handbook, 4 columns BAS221 DESCRIPTION The BAS221 is a general purpose diode fabricated in planar technology, and encapsulated in the ceramic SOD110 package. cathode mark k k a a MAM139 APPLICATIONS General purpose switching in e.g. surface mounted circuits. Marking code: JS. Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current note 1; see Fig.2 tp < 0.5 ms; δ ≤ 0.25 square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 20 7 2 400 +150 150 A A A mW °C °C CONDITIONS − − − − MIN. MAX. 250 200 300 1 V V mA A UNIT 1999 May 07 2 Philips Semiconductors ...




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