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BAS3010B

Infineon Technologies

Medium Power AF Schottky Diode

BAS3010B... Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Low forward voltage, low rev...


Infineon Technologies

BAS3010B

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Description
BAS3010B... Medium Power AF Schottky Diode Forward current: 1 A Reverse voltage: 30 V Low forward voltage, low reverse current For high efficiency DC/DC conversion, fast switching, protection and clamping applications Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAS3010B-03W  Type BAS3010B-03W Parameter Diode reverse voltage2) Forward current 2) Package SOD323 Configuration single Symbol VR IF Value 30 1 1 3.5 10 150 -65 ... 125 -65 ... 150 Marking 2/ red Unit V A Maximum Ratings at TA = 25°C, unless otherwise specified Average rectified forward current (50/60Hz, sinus) I FAV Repetitive peak forward current I FRM (tp ≤ 1 ms, D ≤ 0.5) Non-repetitive peak surge forward current (t ≤ 10 ms) Junction temperature Operating temperature range Storage temperature www.DataSheet4U.com 1Pb-containing 2 I FSM Tj T op T stg °C package may be available upon special request For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves. 1 2007-04-19 BAS3010B... Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 82 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V VR = 10 V VR = 30 V Forward voltage2) IF = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA IF = 1 A VF 230 300 360 420 480 280 350 420 480 550 5 10 20 Unit µA mV AC Characteristics Diode capacitance VR = 5 V, f...




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