BAS416

DISCRETE SEMICONDUCTORS DATA SHEET BAS416 Low-leakage diode Product data sheet Supersedes data of 2002 Nov 19 2004 Jan 26 NXP Semiconductors Low-leakage diode Product data sheet BAS416 FEATURES Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 µs Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATIONS Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. PINNING PIN 1 2 DESCRIPTION cathode anode handbook, halfp1age 2 MAM406 Marking code: D4. The marking bar indicates the cathode. Fig.1 Simplified outline (SOD323) (SC-76) and symbol. ORDERING INFORMATION TYPE NUMBER BAS416 NAME − PACKAGE DESCRIPTION plastic surface mounted package; 2 leads VERSION SOD323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM Ptot Tstg Tj PARAMETER CONDITIONS repetitive peak reverse voltage continuous reverse voltage continuous forward current see Fig.2 repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s total power dissipation storage temperature Tamb = 25 °C; note 1 junction temperature Note 1. Device mounted on an FR4 printed-circuit board. MIN. − − − − MAX....