BAT14-020S

BAT1414-… ...S BAT S Silicon Schottky Diodes q q q q BAT 14- … S Beam lead technology Low dimension High performance Medium barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S Maximum Ratings Parameter Symbol Values BAT 14-020 S BAT 14-050 S Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range VR IF Tj Tstg Top 4 100 175 – 65 … + 150 – 65 … + 150 BAT 14-090 S BAT 14-110 S 4 50 V mA ˚C Unit Marking – Ordering Code Q62702-D1258 Q62702-D1267 Q62702-D1275 Q62702-D1284 Pointed cathode Pin Configuration Package1) S 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 BAT1414-… ...S BAT S Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage IR = 10 µA Diode capacitance VR = 0, f = 1 MHz BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S VF BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S FSSB – – – – rf BAT 14-020 S BAT 14-050 S BAT 14-090 S BAT 14-110 S – – – – 3.5 4.0 7.0 10.0 – – – – 6.0 6.5 6.5 7.0 – – – – Ω – – – – – – – – 0.45 0.47 0.49 0.50 0.55 0.57 0.60 0.65 – – – – – – – – dB V(BR) 4 CT – – – – 0.30 0.20 0.14 0.10 0.35 0.25 0.15 0.12 V – – pF V Values typ. max. Unit Forward voltage IF = 1 mA IF = 10 mA Single sideband noise figure FIF = 1.5 dB, PLO = 0 dBm, fIF =...