MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAT54SWT1/D
Dual Series Schottky Barrier Diodes
These Sc...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAT54SWT1/D
Dual Series Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and
voltage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward
Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
BAT54SWT1
Motorola Preferred Device
30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES
1 ANODE
2 CATHODE 3 CATHODE/ANODE
1 2
3
CASE 419 – 02, STYLE 9 SOT– 323 (SC – 70)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Reverse
Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF 200 1.6 IF TJ Tstg 200 Max 125 Max – 55 to +150 mW mW/°C mA °C °C Value 30 Unit Volts
DEVICE MARKING
BAT54SWT1 = B8
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Reverse Breakdown
Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward
Voltage (IF = 0.1 mAdc) Forward
Voltage (IF = 30 mAdc) Forward
Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward
Voltage (IF = 1.0 mAdc) Forward
Voltage (IF = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non–Repetitive Peak Forward C...