BAT54SWT1G

BAT54SWT1G/BAT54CWT1G Schottky Diodes BAT54SWT1G/BAT54CWT1G Schottky Diodes April 2005 Connection Diagram 3 BAT54SWT1G BAT54CWT1G 33 SOT-323 12 MARKING BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second TSTG TJ Storage Temperature Range Operating Junction Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD RθJA Power Dissipation Thermal Resistance, Junction to Ambient FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads) Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Conditions VR Breakdown Voltage VF Forward Voltage IR Reverse Leakage CT Total Capacitance trr Reverse Recovery Time IR = 10µA IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VR = 25V VR = 1V, f = 1.0MHz IF = IR = 10mA, IRR = 1.0mA, RL = 100Ω 12 12 Value 30 200 600 -65 to +125 -65 to +125 Unit V mA mA °C °C Value 232 430 Unit mW °C/W Min. 30 Max. 240 320 400 500 0.8 2 10 5.0 Units V mV mV mV mV V µA pF ns ©2005 Fairchild Semiconductor Corporation BAT54SWT1G/BAT54CWT1G Rev. A 1 www.fairchildsemi.com BAT54SWT1G/BAT54CWT1G Schottky Diodes Typical Performance Characteristics Forward Current, IF[A] Reverse Current, IR[A...