BAV170M

BAV170M Dual common cathode low-leakage diode 19 May 2016 Product data sheet 1. General description Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: trr = 0.8 µs Low leakage current: IR = 3 pA Repetitive peak reverse voltage VRRM ≤ 85 V Low capacitance Cd = 2 pF Ultra small SMD plastic package Low package height of 0.48 mm AEC-Q101 qualified 3. Applications Low-leakage current applications General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IF forward current IR reverse current VR reverse voltage trr reverse recovery time Conditions Tamb = 25 °C; single diode loaded [1] VR = 75 V; Tj = 25 °C Tj = 25 °C IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C Min Typ Max - - 320 - 0.003 5 - - 75 - 0.8 3 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Unit mA nA V µs Nexperia BAV170M Dual common cathode low-leakage diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode (diode 1) 2 A2 anode (diode 2) 3 CC common cathode Simplified outline 1 3 2 Transparent top view DFN1006-3 (SOT883) Graphic symbol 3 12 006aab034 6. Ordering information Table 3. Ordering information Type number Package Name BAV170M DFN1006-3 Description Vers...