BAV170T

SMD Type Diodes SURFACE MOUNT LOW LEAKAGE DIODE BAV170T; BAV199T +0.050.8 -0.05 Features Ultra-Small Surface Mount Package Very Low Leakage Current Absolute Maximum Ratings Ta = 25 Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Repetitive Peak Forward Current Symbol VRRM VRWM VR VR(RMS) IFM IFRM Non-Repetitive Peak Forward Surge Current IFSM Power Dissipation (Note 1) PD Thermal Resistance Junction to Ambient Air (Note 1) RèJA Operating and Storage Temperature Range Tj , TSTG Note 1.Device mounted on FR-4 PC board with recommended pad layout Conditions Single Diode Double Diode @ t = 1.0 s @ t = 1.0 ms @ t = 1.0 s SOT-523 1.6+0.1 -0.1 1.0+0.1 -0.1 0.2+0.05 -0.05 21 Unit: mm 0.1+0.01 -0.01 +0.151.6 -0.15 0.55 3 0.5+0.1 -0.1 0.3+0.25 -0.05 +0.050.75 -0.05 +0.10.8 -0.1 0.35 1. Base 2. Emitter 3. Collecter Value 85 85 85 60 215 125 500 4 1 0.5 150 833 -65 to + 150 Unit V V V V mA mA A mW /W www.kexin.com.cn 1 SMD Type BAV170T; BAV199T Diodes Electrical Characteristics Ta = 25 Parameter Symbol Conditions Reverse Breakdown Voltage (Note 2) V(BR)R IR = 100 A IF = 1.0 mA Forward Voltage (Note 2) IF = 10 mA VF IF = 50 mA IF = 150 mA Leakage Current (Note 2) VR = 75 V IR VR = 75 V; Tj = 150 Total Capacitance CT f = 1 MHz; VR = 0 V Reverse Recovery Time IF = IR = 10mA, trr Irr = 0.1 x IR, RL = 100 Note 2.Short duration test pulse used to mi...