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BAV70L Datasheet

Part Number BAV70L
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual Switching Diode Common Cathode
Datasheet BAV70L DatasheetBAV70L Datasheet (PDF)

Dual Switching Diode Common Cathode BAV70L, SBAV70L Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 V Forward Current IF 200 mA Repetitive Peak Forward Current IFRM 1.5 A (Pulse Wave = 1 sec, Duty Cycle = 66%) Non−Repetitive Peak .

  BAV70L   BAV70L






Part Number BAV70WT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Dual Switching Diodes
Datasheet BAV70L DatasheetBAV70WT1 Datasheet (PDF)

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Dual Switching Diodes BAV70WT1 3 DEVICE MARKING BAV70WT1 = A4 1 2 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Symbol Max 70 200 500 Max 200 1.6 0.625 300 2.4 417 –55 to +150 Unit Vdc mAdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C CASE 419–04, STYLE 5 SOT–323 (SC–70) ANODE 1 ANODE 2 THERMAL CHARACTERISTICS PD TA = 25°C Derate above 25°C Thermal Resistance, Junction to Am.

  BAV70L   BAV70L







Part Number BAV70WT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual Switching Diode
Datasheet BAV70L DatasheetBAV70WT1 Datasheet (PDF)

www.DataSheet4U.com BAV70WT1 Preferred Device Dual Switching Diode Common Cathode Features • Pb−Free Package is Available http://onsemi.com ANODE 1 2 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit V mA mA 3 CATHODE MARKING DIAGRAM 3 3 SOT−323 CASE 419 STYLE 5 2 1 2 A4 MG G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation a.

  BAV70L   BAV70L







Part Number BAV70WT1
Manufacturers Motorola Inc
Logo Motorola  Inc
Description Dual Switching Diode
Datasheet BAV70L DatasheetBAV70WT1 Datasheet (PDF)

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by BAV70WT1/D Dual Switching Diode ANODE 1 3 CATHODE 2 BAV70WT1 Motorola Preferred Device 3 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc CASE 419–02, STYLE 5 SC–70/SOT–323 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junc.

  BAV70L   BAV70L







Part Number BAV70WT
Manufacturers MCC
Logo MCC
Description Switching Diode
Datasheet BAV70L DatasheetBAV70WT Datasheet (PDF)

www.DataSheet4U.com MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAV70WT Features • Power dissipation: 200mW (Tamb=25℃) • • Case Material: Molded Plastic. Classification Rating 94V-0 For Surface Mount Application UL Flammability 200mW Switching Diode SOT-323 A D Marking KJA Maximum Ratings • • Operating Temperature: -55℃ to +150℃ Storage Temperature: -55℃ to +150℃ F E B C Electr.

  BAV70L   BAV70L







Part Number BAV70W-Q
Manufacturers nexperia
Logo nexperia
Description High-speed switching double diode
Datasheet BAV70L DatasheetBAV70W-Q Datasheet (PDF)

BAV70W-Q High-speed switching double diode 14 June 2021 Product data sheet 1. General description High-speed switching double diode, encapsulated in a very small SOT323 (SC-70) SurfaceMounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 1.5 pF • Low leakage current • Reverse voltage: VR ≤ 100 V • Very small SMD plastic package • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applicatio.

  BAV70L   BAV70L







Dual Switching Diode Common Cathode

Dual Switching Diode Common Cathode BAV70L, SBAV70L Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 100 V Forward Current IF 200 mA Repetitive Peak Forward Current IFRM 1.5 A (Pulse Wave = 1 sec, Duty Cycle = 66%) Non−Repetitive Peak Forward Current IFSM A (Square Wave, TJ = 25°C prior to surge) t = 1 ms 31 t = 10 ms 16 t = 100 ms 10 t = 1 ms 4.5 t = 10 ms 2.5 t = 100 ms 1.0 t=1s 0.5 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg − 55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. DATA SHEET www.onsemi.com SOT−23 (TO−236) CASE 318 STYLE 9 3 CATHODE ANODE 1 2 ANODE M.


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