BAV70L, SBAV70L
Dual Switching Diode Common Cathode
Features
• S Prefix for Automotive and Other Applications Requirin...
BAV70L, SBAV70L
Dual Switching Diode Common Cathode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse
Voltage
VR
Forward Current
IF
Peak Forward Surge Current
IFM(surge)
Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
100 200 500 1.5
V mA mA A
Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms
t = 10 ms
t = 100 ms
IFSM
31 16 10 4.5 2.5 1.0
A
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C Derate above 25°C
PD 225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) TA = 25°C Derate above 25°C
PD 300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, p...
