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BAV70M3

ON Semiconductor

Dual Switching Diode Common Cathode

Dual Switching Diode Common Cathode BAV70M3 The BAV70M3T5G device is a spin−off of our popular SOT−23 three−leaded devi...


ON Semiconductor

BAV70M3

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Description
Dual Switching Diode Common Cathode BAV70M3 The BAV70M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features Reduces Board Space These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS VR 100 IF 200 IFM(surge) 500 Vdc mAdc mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD mW 265 mW/°C 2.1 Thermal Resistance, Junction−to−Ambient RqJA 470 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 640 mW 5.1 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 195 °C/W Junction and Storage Temperature TJ, Tstg − 55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. DATA SHEET www.onsemi.com 70 V DUAL COMMON CATHODE SWITCHING DIODES 1 ANODE 3 CATHODE 2 ANODE MARKING DIAGRAM 3 SOT−723 CASE 631AA AL M 2 STYLE 3 1 1 AL = Specifi...




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