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BAV70WT1 Datasheet

Part Number BAV70WT1
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual Switching Diode
Datasheet BAV70WT1 DatasheetBAV70WT1 Datasheet (PDF)

www.DataSheet4U.com BAV70WT1 Preferred Device Dual Switching Diode Common Cathode Features • Pb−Free Package is Available http://onsemi.com ANODE 1 2 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit V mA mA 3 CATHODE MARKING DIAGRAM 3 3 SOT−323 CASE 419 STYLE 5 2 1 2 A4 MG G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation a.

  BAV70WT1   BAV70WT1






Part Number BAV70WT1
Manufacturers Motorola Inc
Logo Motorola  Inc
Description Dual Switching Diode
Datasheet BAV70WT1 DatasheetBAV70WT1 Datasheet (PDF)

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by BAV70WT1/D Dual Switching Diode ANODE 1 3 CATHODE 2 BAV70WT1 Motorola Preferred Device 3 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc CASE 419–02, STYLE 5 SC–70/SOT–323 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junc.

  BAV70WT1   BAV70WT1







Part Number BAV70WT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Dual Switching Diodes
Datasheet BAV70WT1 DatasheetBAV70WT1 Datasheet (PDF)

www.DataSheet4U.com LESHAN RADIO COMPANY, LTD. Dual Switching Diodes BAV70WT1 3 DEVICE MARKING BAV70WT1 = A4 1 2 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Symbol Max 70 200 500 Max 200 1.6 0.625 300 2.4 417 –55 to +150 Unit Vdc mAdc mAdc Unit mW mW/°C °C/W mW mW/°C °C/W °C CASE 419–04, STYLE 5 SOT–323 (SC–70) ANODE 1 ANODE 2 THERMAL CHARACTERISTICS PD TA = 25°C Derate above 25°C Thermal Resistance, Junction to Am.

  BAV70WT1   BAV70WT1







Dual Switching Diode

www.DataSheet4U.com BAV70WT1 Preferred Device Dual Switching Diode Common Cathode Features • Pb−Free Package is Available http://onsemi.com ANODE 1 2 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit V mA mA 3 CATHODE MARKING DIAGRAM 3 3 SOT−323 CASE 419 STYLE 5 2 1 2 A4 MG G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 200 Unit mW A4 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.6 RqJA PD 625 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW/°C °C/W mW mW/°C °C/W °C ORDERING INFORMATION Device BAV70WT1 BAV70WT1G Package SOT−323 SOT−323 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. †For information on tape and reel specifications, including part orientation and tape sizes, please re.


2005-03-26 : HYB3116160BSJ    HYB3116160BSJ-50    HYB3116160BSJ-60    HYB3116160BSJ-70    HYB3116160BST-50    HYB3116160BST-60    HYB3116160BST-70    HYB3116400BJ-50    HYB3116400BJ-60    HYB3116400BJ-70   


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