BAV99LT1G

BAV99L, SBAV99L Dual Series Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (Each Diode) Rating Symbol Value Unit Reverse Voltage VR 100 Forward Current IF 215 Peak Forward Surge Current IFM(surge) 500 Repetitive Peak Reverse Voltage VRRM 100 Average Rectified Forward Current (Note 1) IF(AV) 715 (averaged over any 20 ms period) Vdc mAdc mAdc V mA Repetitive Peak Forward Current Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s IFRM 450 mA IFSM A 2.0 1.0 0.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range RqJA TJ, Tstg 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. 417 −65 to +150 °C/W °C www.onsemi.com CASE 318 SOT−23 STYLE 11 AN...